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Thus, high accuracy is expected especially in specific angles and their parallelism. However, the size is limited to several 100mum due to the duration time of the etch-mask. This study proposes a complex process of conventional machining and etching to obtain large-scale precise regular geometrv that consist of specific crystal planes. Cleavage is also a process that utilizes the crystal regularity. A four-inch (110) silicon wafer was broken by cleavage. and 4cm*lcm parallelogram whose side-walls consist of {11l} planes was obtained. However, the angle at the vertex did not coincide with the theoretical one 70.5 degree. Dimensional accuracy obtained by anisotropic etching was also evaluated. It was found that the opening angle of V-grooves etched on (100) substrate are accurately 70.5 as the theory and smooth surface with 0.02nm Ra is easily obtained if the miss-alignment of the mask with crystal orientation is less than 0.2 degree. Then, a new process was proposed. 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機械加工を併用した大規模・高精度異方性エッチング
http://hdl.handle.net/10748/2168
http://hdl.handle.net/10748/21688b06a6c5-8f03-4e6e-84f1-d51fdb205c07
名前 / ファイル | ライセンス | アクション |
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10052-001.pdf (3.4 MB)
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Item type | 研究報告書 / Research Paper(1) | |||||
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公開日 | 2010-11-29 | |||||
タイトル | ||||||
タイトル | 機械加工を併用した大規模・高精度異方性エッチング | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18ws | |||||
資源タイプ | research report | |||||
著者 |
諸貫, 信行
× 諸貫, 信行× 内山, 賢治× 角田, 陽× 古川, 勇二 |
|||||
著者(ヨミ) |
モロヌキ, ノブユキ
× モロヌキ, ノブユキ× ウチヤマ, ケンジ× カクタ, アキラ× フルカワ, ユウジ |
|||||
著者別名 |
Moronuki, Nobuyuki
× Moronuki, Nobuyuki× Uchiyama, Kenji× Kakuta, Akira× Furukawa, Yuji |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 単結晶シリコンの異方性エッチングを用いると,特定結晶面から成る形状が容易に得られるため,高精度な加工が行える.しかし,マスクもエッチング液に侵されてしまうため,本加工法はミクロンオ-ダの微細形状加工に限って適用されている.本研究では,機械加工で予め所望の形状に加工してからエッチングを行うことで大規模かつ高精度な形状を創成する方法を検討した. エッチングに先だって,へき開を利用した加工を行った場合の形状精度評価を行った.(110)シリコンウェハをへき開すると,へき開面である(111)面は,基板に対して垂直の側壁を構成する.(111)面はウェハ面内で70.5度で交わるような2方向に存在するため,平行四辺形が容易に得られる.実験の結果,数mmの範囲では特定結晶面からなる高精度形状が得られることがわかった.また,異方性エッチングで得られる形状の精度評価も十分に行えていないことから,エッチングのみの結果について評価を行った.その結果,(100)ウェハに加工したV溝は理論どおりの70.5でありことがわかり,結晶軸に対するマスク方位誤差が0.5度以下であれば,表面粗さ20nm程度が容易に得られることがわかった. 次いで,厚さ10mmの(100)シリコンを準備し,これに成形砥石で70.5度のV溝(深さ4mm)を加工した.これをエッチングして大規模な単一結晶面創成を試みた.エッチング時間が長くなることから,一般的な酸化膜ではなく,タングステン薄膜をマスクとして用いた.しかし,このマスクがエッチング中に剥離してしまい,十分なエッチングが行えなかった.しかし,仕上げ面をSEM観察したところ,砥石による加工痕がエッチングの進行に伴って滑らかになっていく様子がわかり,マスクを工夫することで高精度な形状が得られる見込みを得た. | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Anisotropic etching produces regular shapes that. consist of specific crystal planes. Thus, high accuracy is expected especially in specific angles and their parallelism. However, the size is limited to several 100mum due to the duration time of the etch-mask. This study proposes a complex process of conventional machining and etching to obtain large-scale precise regular geometrv that consist of specific crystal planes. Cleavage is also a process that utilizes the crystal regularity. A four-inch (110) silicon wafer was broken by cleavage. and 4cm*lcm parallelogram whose side-walls consist of {11l} planes was obtained. However, the angle at the vertex did not coincide with the theoretical one 70.5 degree. Dimensional accuracy obtained by anisotropic etching was also evaluated. It was found that the opening angle of V-grooves etched on (100) substrate are accurately 70.5 as the theory and smooth surface with 0.02nm Ra is easily obtained if the miss-alignment of the mask with crystal orientation is less than 0.2 degree. Then, a new process was proposed. Near-net-shape is obtained bv grinding and then processed by anisotropic etching to improve the accuracy. V-grooves with 4mm depth are ground on 10mm-thick (100) silicon substrate and then etched. Tungsten thin film with 5Onm thickness was deposited and used as etching mask. Unfortunately the mask was dissolved after ten minutes etching and sufficient etching was not carried out. As a result, dimensional accuracy could not be evaluated. However, the principle was verified through the finished surface observation by profilometer and SEM.That is, residual geometrical error and surface roughness after grinding was improved by etching, and the final shape converges to the one that consists of specific crystal planes. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 科学研究費補助金研究成果報告書, 課題番号9650143, 1997年度~1998年度, 基盤研究(C) | |||||
書誌情報 | p. 1-46, 発行日 1999-03 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
その他のタイトル | ||||||
その他のタイトル | Large Scale Anisotropic Etching Combined with Mechanical Machining |